NONPLANAR SEMICONDUCTOR DEVICES PROVIDED WITH A CYLINDRICAL CLOSED EFFECTIVE LAYER

摘要

The invention relates to electronic engineering, in particular to the design and production of nonplanar semiconductor devices provided with a cylindrical closed effective layer and can be used for industrial power electronics and electrical engineering in order to produce control devices for high-voltage current and for industrial power lasers. The aim of the invention is to produce the semiconductor devices having higher operating power values and to lower the electrothermal degradation level. Said aim is achieved by forming the cylindrical closed effective layer in the structures of the semiconductor devices. Examples of the following semiconductor devices: a field-effect insulated gate transistor, a p-n injection laser and variants thereof are also disclosed.