发明名称 Passivated magneto-resistive bit structure
摘要 A passivated magneto-resistive bit structure is disclosed in which surfaces subjects to oxidation or corrosion are protected. In one embodiment, a bit structure is encapsulated by means of an etch stop barrier material. In another embodiment an etch stop barrier material protects the top of a bit structure and dielectric spacers protect the side walls.
申请公布号 US2002085412(A1) 申请公布日期 2002.07.04
申请号 US20020078234 申请日期 2002.02.14
申请人 LIU HARRY;BERG LONNY;LARSON WILLIAM L.;LI SHAOPING;ZHU THEODORE;DREWES JOEL 发明人 LIU HARRY;BERG LONNY;LARSON WILLIAM L.;LI SHAOPING;ZHU THEODORE;DREWES JOEL
分类号 G11C11/15;H01L21/8246;H01L27/22;(IPC1-7):G11C11/00 主分类号 G11C11/15
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