发明名称 |
Passivated magneto-resistive bit structure |
摘要 |
A passivated magneto-resistive bit structure is disclosed in which surfaces subjects to oxidation or corrosion are protected. In one embodiment, a bit structure is encapsulated by means of an etch stop barrier material. In another embodiment an etch stop barrier material protects the top of a bit structure and dielectric spacers protect the side walls.
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申请公布号 |
US2002085412(A1) |
申请公布日期 |
2002.07.04 |
申请号 |
US20020078234 |
申请日期 |
2002.02.14 |
申请人 |
LIU HARRY;BERG LONNY;LARSON WILLIAM L.;LI SHAOPING;ZHU THEODORE;DREWES JOEL |
发明人 |
LIU HARRY;BERG LONNY;LARSON WILLIAM L.;LI SHAOPING;ZHU THEODORE;DREWES JOEL |
分类号 |
G11C11/15;H01L21/8246;H01L27/22;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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