| 摘要 |
A metal film made of titanium is formed on a surface of a wafer. Then, the metal film is subjected to a patterning process to selectively remove undesired portions to form a metal film on an outer area of the wafer and a lattice-patterned metal film on a pattern area of the wafer. The lattice-patterned metal film is formed on an area corresponding to scribe lines of devices to be arranged in a matrix on the wafer. Then, the metal films are connected to a ground. Subsequently, a vanadium oxide film is formed on the wafer using a sputtering process. Therefore, the vanadium oxide film is prevented from becoming charged at the time of deposition thereof on the wafer to suppress increasing of self bias potential and attain uniformity in resistance value of the vanadium oxide film.
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