| 摘要 |
The present invention relates to a process for preparing metal nitride thin film by chemical deposition employing amine-adduct single-source precursor at low temperatures. In accordance with the present invention, the chemical deposition is performed at low temperatures with a relatively cheap silicon substrate instead of expensive sapphire, which makes possible the economical preparation of the nitride thin film. Furthermore, since the invented process can eliminate the problems confronted in the post electrode deposition caused by insulating substrate, it can be practically applied to the development of new materials and the preparation of multi-layer thin film.
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