SEMICONDUCTOR DEVICE, AND METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A high-frequency power amplification device comprises two amplification systems, each including a plurality of cascaded amplification stages and two voltage supply terminals. A first voltage supply terminal is connected to the front amplification stage of the first amplification system and the remaining amplification stages of the second amplification system. A second voltage supply terminal is connected to the front amplification stage of the second amplification system and the remaining amplification stages of the first amplification system. Low-resistance air-core coils consisting of densely coiled spiral copper wire with a diameter of about 0.1 mm are connected in series between the final amplification stage and the voltage supply terminal of each amplification system. Owing to no signal leakage to the front amplification stage from the final amplification stage and to small DC resistance of the air-core coils, the oscillation margin of each amplification system is improved. The use of inexpensive air-core coils reduces the cost of the high-frequency power amplification device. Air-core coils are mounted on a module substrate using a bulk feeder.