发明名称 Charge pump circuit for semiconductor device
摘要 A charge pump circuit with improved pump efficiency and usable in a semiconductor memory device, includes a charge node, a pump capacitor for pumping charges of the charge node, a charge transfer transistor connected between the charge node and an output node so as to transfer the charges of the pumped charge node, a charging transistor for charging the charge node with a predetermined voltage, and a first transistor coupled to the charge node for preventing flow-back of charges from an output node to the charge node during a charging interval.
申请公布号 US2002084832(A1) 申请公布日期 2002.07.04
申请号 US20010028685 申请日期 2001.12.28
申请人 JIN SEUNG EON 发明人 JIN SEUNG EON
分类号 G11C5/14;H02M3/07;(IPC1-7):G05F1/10 主分类号 G11C5/14
代理机构 代理人
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