| 发明名称 |
TECHNIQUE TO PRODUCE ISOLATED JUNCTIONS BY FORMING AN INSULATION LAYER |
| 摘要 |
A method for isolating a source and a drain in an MOS transistor by forming an insulation layer adjacent to the source and an insulation layer adjacent to the drain, and an apparatus produced from such a method.
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| 申请公布号 |
US2002086510(A1) |
申请公布日期 |
2002.07.04 |
| 申请号 |
US20000752335 |
申请日期 |
2000.12.29 |
| 申请人 |
ROBERDS BRIAN |
发明人 |
ROBERDS BRIAN |
| 分类号 |
H01L21/336;H01L21/762;H01L29/06;(IPC1-7):H01L31/113;H01L29/94;H01L31/062;H01L21/823;H01L31/119;H01L29/76 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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