| 摘要 |
PURPOSE: An image sensor and a manufacturing method thereof are provided to prevent a micro-lens form being scratched or fractured in order to improve a photo-sensitivity and a yield. CONSTITUTION: An image sensor comprises isolation layers(31), an interlayer dielectric(32) formed to entirely enclose a semiconductor substrate(30) formed with a lower structure, a metal interconnection on the interlayer dielectric(32), a planarization layer(33) and color filters(R,G,B) sequentially formed on the interlayer dielectric(32), a first OCM planarization layer(34) having depressed portions formed on the color filters(R,G,B), a micro-lens formed by filling the depressed portions of the first OCM planarization layer(34) with a nitride(35), and a second OCM planarization layer formed on the nitride(35). At this point, the upper portion of the sensor has a flat surface instead of a convex lens, thereby reducing an impact, so that a yield is improved.
|
