| 摘要 |
PURPOSE: A method for manufacturing a transistor of a semiconductor device is provided to improve electrical properties of transistors by forming S-N bonding on a polysilicon layer. CONSTITUTION: A polysilicon layer(13) as a gate electrode, a gate spacer(15), and a lightly and a heavily doped regions(14a,14b) are formed on a semiconductor substrate(11). An S-N bonding(13a) is formed on the surface of the polysilicon layer(13) by implanting nitrogen ions. After forming a thermal oxide on the gate electrode and the lightly and heavily doped regions, source and drain regions(14) are formed by annealing. After removing the thermal oxide, a silicide layer(17) is formed on the gate electrode and the source and drain regions.
|
