发明名称 |
Thin laminate film structure for electrostatic or magnetic applications and method for making same |
摘要 |
A thin laminate film structure comprises a first metallic lamina formed on a surface of a first dielectric lamina and a third lamina formed on a surface of the first metallic lamina opposite the first dielectric lamina. Electrical and mechanical properties of the thin laminate film structure may be determined and/or optimized separately. The first metallic lamina and the first dielectric lamina may comprise aluminized mylar. The third lamina may or may not be made of a dielectric material. The thin laminate film structure may further comprise a second metallic lamina formed on a surface of the third lamina opposite the first metallic lamina and a second dielectric lamina formed on a surface of the second metallic lamina opposite the third lamina. In such a case, the thin laminate film structure allows dual-direction actuation of electrostatically and/or magnetically driven devices, such as microdevice valves, in which the thin laminate film structure may be employed.
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申请公布号 |
US2002086149(A1) |
申请公布日期 |
2002.07.04 |
申请号 |
US20000749431 |
申请日期 |
2000.12.28 |
申请人 |
SWARTZ LARS E.;BIEGELSEN DAVID K. |
发明人 |
SWARTZ LARS E.;BIEGELSEN DAVID K. |
分类号 |
B32B15/08;B32B27/08;B81B3/00;F15C5/00;F16K99/00;(IPC1-7):B32B7/02 |
主分类号 |
B32B15/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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