发明名称 |
Semiconductor memory device capable of outputting a wordline voltage via an external pin |
摘要 |
A semiconductor memory device includes a select signal generator, a wordline voltage generator, and a switch circuit. During a test operation mode, the device determines whether a wordline voltage has required level. The select signal generator activates one of select signals each corresponding to the other wordline voltages responsive to external select code signals. The external select code signals appoint an external instruction signal representative and appoint other wordline voltages used in the memory device. The wordline voltage generator generates a wordline voltage corresponding to the activated select signal out. The switch circuit transfers the wordline voltage outputted from the wordline voltage generator to a pad connected to an external pin.
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申请公布号 |
US2002085429(A1) |
申请公布日期 |
2002.07.04 |
申请号 |
US20010952515 |
申请日期 |
2001.09.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
KIM HYUNG-GON;LEE YEONG-TAEK |
分类号 |
G01R31/28;G11C8/08;G11C16/02;G11C16/06;G11C29/12;(IPC1-7):G11C5/00 |
主分类号 |
G01R31/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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