发明名称 ARRANGEMENT OF BITLINE BOOSTING CAPACITOR IN SEMICONDUCTOR MEMORY DEVICE
摘要 A semiconductor memory device includes first and second isolation transistors for electrically connecting/isolating a pair of bitlines to/from a sense amplifier circuit, and a MOS transistor having a source region that is shared with one of sources of the first and second isolation transistors. The MOS transistor may be used as a bitline boosting capacitor.
申请公布号 US2002085428(A1) 申请公布日期 2002.07.04
申请号 US20010879076 申请日期 2001.06.11
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KANG SANG-SEOK;LEE YUN-SANG;CHOI JONG-HYUN;JOO JAE-HOON
分类号 G11C7/12;G11C11/4094;H01L27/108;(IPC1-7):G11C5/00 主分类号 G11C7/12
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