发明名称 |
Measurement technique for ultra-thin oxides |
摘要 |
A method of measuring the thickness of ultra-thin (e.g., <200 Å) oxide formed on a semiconductor device uses a reference sample (i.e., another silicon wafer) which has been pre-processed to include a relatively thick oxide surface layer. The thickness of the reference oxide (t) is measured using any conventional technique (such as an ellipsometer). An ultra-thin oxide is then simultaneously formed on both the reference sample and semiconductor device. The total oxide thickness (T) of the dual-layer structure on the reference sample is then measured (again, using any conventional technique), and the difference between the two measured values (T-t=delta) is defined as the thickness of the ultra-thin oxide layer.
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申请公布号 |
US2002085214(A1) |
申请公布日期 |
2002.07.04 |
申请号 |
US20010754611 |
申请日期 |
2001.01.04 |
申请人 |
DAUTARTAS MINDAUGAS FERNAND;PRZYBYLEK GEORGE JOHN |
发明人 |
DAUTARTAS MINDAUGAS FERNAND;PRZYBYLEK GEORGE JOHN |
分类号 |
C23C14/54;C23C16/52;G01B11/06;G01B21/08;H01L21/66;(IPC1-7):G01B11/06 |
主分类号 |
C23C14/54 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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