发明名称 CHARACTERIZING SEMICONDUCTOR WAFERS WITH ENHANCED S PARAMETER CONTOUR MAPPING
摘要 A system, and methods of its use, for characterizing semiconductor wafers with enhanced S parameter contour mapping employ small signal scatter parameter measurements of a representative sample of die to create a contour map of a wafer surface. Those die which fail to meet performance specifications are marked as bad die before the wafer is sent to a back-end process, where the unmarked good die are extracted and assembled into working products. By using enhanced S parameter mapping for characterizing the die, only those die marked as bad die need be discarded. Thus, instead of scrapping an entire wafer die lot based on the failure of a single die from that wafer, the wafer sort yield may be dramatically increased. The increased in wafer sort yield in turn, increases total production yield.
申请公布号 WO02052635(A2) 申请公布日期 2002.07.04
申请号 WO2001IB02633 申请日期 2001.12.19
申请人 ERICSSON INC. 发明人 LAUREANTI, STEVEN, J.
分类号 G01R27/28;G01R31/28 主分类号 G01R27/28
代理机构 代理人
主权项
地址