APPARATUS AND METHOD OF PARTIAL ION IMPLANTATION USING WIDE BEAM

摘要

An apparatus and a method of a nonuniform ion implantation using a wide beam are provided to differentiate ion implantation amount at a wafer center and an edge by using a funnel-shaped beam magnet lens. An ion beam generator(210) generates an ion beam. A funnel-shaped beam magnet lens(220) spreads the ion beam generated from the ion beam generator to a wide ion beam being incident onto a wafer(100). Therefore, the funnel-shaped beam magnet lens differentiates ion implantation amount of a wafer center from that of an edge of the wafer. The funnel-shaped beam magnet lens is movable to a horizontal direction with respect to a surface of the wafer. The funnel-shaped beam magnet lens is comprised of a plurality of magnet pieces to which separated bias voltages are applied.