| 摘要 |
A method of manufacturing a semiconductor device having multiple gate insulating layers is provided to form simultaneously a variety of gate insulating layers having different thickness through a single oxidation process. A first region(A) and a second region(B) are formed on a semiconductor substrate(100). A mask pattern is formed on the second region of the substrate. An oxidation retarding layer(108) made of an oxynitride material is grown on the first region. The mask pattern is removed from the resultant structure. First and second gate insulating layers(112a,112b) are formed on the first and second regions of the substrate through a silicon oxide growing process, respectively. The first gate insulating layer has a first thickness and the second gate insulating layer has a second thickness, wherein the second thickness is larger than the first thickness.
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