SEMICONDUCTOR DEVICE INCLUDING DIFFUSION BARRIER AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A semiconductor device including a diffusion barrier and a method for forming the same are provided to improve reliability of a transistor by preventing diffusion of ions from an inter-metal insulating layer to a gate insulating layer. CONSTITUTION: A gate oxide layer(110) and a gate poly(120) are formed on a semiconductor substrate(100). A spacer(130) is formed on both sidewalls of the gate oxide layer(110) and the gate poly(120). An interlayer dielectric(140) is formed on a whole surface of the semiconductor substrate(100). A diffusion barrier(150) is formed on the interlayer dielectric(140). An insulating layer(160) is formed on the diffusion barrier(150). A conductive layer(170) is formed on a part of the diffusion barrier(150). An inter-metal insulating layer(180) is formed on the whole surface of the diffusion barrier(150). The diffusion barrier(150) is used for preventing a diffusion process of the inter-metal insulating layer(180) to the gate oxide layer(110).