发明名称 |
Dummy layer diode structures for ESD protection |
摘要 |
Described are structures for a device with a controllable dummy layer which can provide a low controllable trigger voltage and can be used as a first triggered device in ESD protection networks. A controllable dummy layer diode is provided which is structured as a butting diode with a dummy polysilicon layer above the butting region. The dummy polysilicon layer functions as an STI block to remove the STI between the n+ and p+ regions of the diode. In one embodiment the diode has the function of a controllable gate with a punchthrough-like-trigger, in which a capacitor-couple circuit couples a portion of the ESD voltage into the gate of the diode to provide a gate voltage. By changing the channel length under the gate of the diode as well as the gate voltage, the reverse-biased voltage of the diode is readily adjusted to a predetermined
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申请公布号 |
US2002084485(A1) |
申请公布日期 |
2002.07.04 |
申请号 |
US20020067558 |
申请日期 |
2002.02.07 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
JUN CAI;FOO LO KENG |
分类号 |
H01L21/8234;H01L27/02;(IPC1-7):H01L29/76;H01L23/62;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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