发明名称 Interconnect structures and a method of electroless introduction of interconnect structures
摘要 A method comprising introducing an interconnect structure in an opening through a dielectric over a contact point, and introducing a conductive shunt material through a chemically-induced oxidation-reduction reaction. A method comprising introducing an interconnect structure in an opening through a dielectric over a contact point, introducing a conductive shunt material having an oxidation number over an exposed surface of the interconnect structure, and reducing the oxidation number of the shunt. An apparatus comprising a substrate comprising a device having contact point, a dielectric layer overlying the device with an opening to the contact point, and an interconnect structure disposed in the opening comprising an interconnect material and a different conductive shunt material.
申请公布号 US2002084529(A1) 申请公布日期 2002.07.04
申请号 US20000753256 申请日期 2000.12.28
申请人 DUBIN VALERY M.;THOMAS CHRISTOPHER D.;MCGREGOR PAUL;DATTA MADHAV 发明人 DUBIN VALERY M.;THOMAS CHRISTOPHER D.;MCGREGOR PAUL;DATTA MADHAV
分类号 H01L21/288;H01L21/768;H01L23/532;(IPC1-7):H01L21/476;H01L23/48;H01L23/52;H01L29/40 主分类号 H01L21/288
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