发明名称 |
Interconnect structures and a method of electroless introduction of interconnect structures |
摘要 |
A method comprising introducing an interconnect structure in an opening through a dielectric over a contact point, and introducing a conductive shunt material through a chemically-induced oxidation-reduction reaction. A method comprising introducing an interconnect structure in an opening through a dielectric over a contact point, introducing a conductive shunt material having an oxidation number over an exposed surface of the interconnect structure, and reducing the oxidation number of the shunt. An apparatus comprising a substrate comprising a device having contact point, a dielectric layer overlying the device with an opening to the contact point, and an interconnect structure disposed in the opening comprising an interconnect material and a different conductive shunt material.
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申请公布号 |
US2002084529(A1) |
申请公布日期 |
2002.07.04 |
申请号 |
US20000753256 |
申请日期 |
2000.12.28 |
申请人 |
DUBIN VALERY M.;THOMAS CHRISTOPHER D.;MCGREGOR PAUL;DATTA MADHAV |
发明人 |
DUBIN VALERY M.;THOMAS CHRISTOPHER D.;MCGREGOR PAUL;DATTA MADHAV |
分类号 |
H01L21/288;H01L21/768;H01L23/532;(IPC1-7):H01L21/476;H01L23/48;H01L23/52;H01L29/40 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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