| 摘要 |
PURPOSE: A method for fabricating a phase shift mask of a semiconductor device is provided to improve resolving power by generating destructive interference between the light reflected from a phase shift layer and the light reflected from a non-phase lift region. CONSTITUTION: A reflective layer(23) having a structure of a multi-layer is formed on a transparent substrate(21). A phase shift layer is formed on an upper portion of the reflective layer(23). An absorbing layer is formed on an upper portion of the phase shift layer. The absorbing layer is formed by a TiN layer, a Cr layer, an Nisi layer, a Ti layer, a TaSi layer, or an Al layer. The first photoresist layer pattern is formed on an upper portion of the absorbing layer in order to expose an expected pattern part. An absorbing layer pattern(28) is formed by etching the absorbing layer. The first photoresist layer pattern is removed. The second photoresist layer pattern is formed on a whole surface. A phase shift layer pattern(26) is formed by etching the phase shift layer of a non-phase shift region(B). The second photoresist layer pattern is removed.
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