| 摘要 |
A method for manufacturing, on a silicon substrate, a capacitor of high capacitance, including the following successive steps, coating the substrate with a first insulating layer, successively forming and etching on the substrate, a first electrode, a dielectric made of a ferroelectric material with a high dielectric constant and, a second electrode, coating the structure with a second insulating layer for encapsulating the capacitor structure, forming contact openings towards semiconductor areas and towards the first electrode of the capacitor, depositing and etching a first conductive layer, depositing a third protective insulating layer, depositing a second conductive layer establishing, in particular, a contact with the upper electrode of the component, and depositing a final passivation layer.
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