发明名称 |
Method for depositing a two-layer diffusion barrier |
摘要 |
A method for depositing a two-layer diffusion barrier on a semiconductor wafer consisting of a TaN layer and a Ta layer serving as a carrier layer for copper interconnects. The TaN layer is inventively deposited at temperatures above 200° C. in a first step, and the Ta layer is deposited in a second step while cooling the semiconductor wafer to a temperature below 50° C.
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申请公布号 |
US2002086527(A1) |
申请公布日期 |
2002.07.04 |
申请号 |
US20010992977 |
申请日期 |
2001.11.19 |
申请人 |
SCHMIDBAUER SVEN;RUF ALEXANDER |
发明人 |
SCHMIDBAUER SVEN;RUF ALEXANDER |
分类号 |
C23C14/06;H01L21/28;H01L21/285;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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