METHOD OF HEAT TREATMENT OF SILICON WAFER DOPED WITH BORON

摘要

A method of subjecting a silicon wafer doped with boron to a heat treatment in an argon atmosphere, wherein said argon atmosphere is replaced by a hydrogen atmosphere or a mixed gas of an argon gas and a hydrogen gas in a proper fashion, to thereby uniformize the boron concentration in the thickness direction in the surface layer of the silicon wafer doped with boron.