| 发明名称 |
Semiconductor device and method of manufacturing the same |
| 摘要 |
A fin type MOSFET and a method of manufacturing the fin type MOSFET are disclosed. Gate structures in the fin type MOSFET are formed by a damascene process without a photolithography process. Impurities used to form a channel region are selectively implanted into portions of a semiconductor substrate adjacent to the gate structures.
|
| 申请公布号 |
US2007085127(A1) |
申请公布日期 |
2007.04.19 |
| 申请号 |
US20060637793 |
申请日期 |
2006.12.13 |
| 申请人 |
KANG HEE-SOO;YOON JAE-MAN;PARK DONG-GUN;HAN SANG-YEON;AHN YOUNG-JOON;LEE CHOONG-HO |
发明人 |
KANG HEE-SOO;YOON JAE-MAN;PARK DONG-GUN;HAN SANG-YEON;AHN YOUNG-JOON;LEE CHOONG-HO |
| 分类号 |
H01L29/94;H01L21/336;H01L27/108;H01L29/76;H01L29/786;H01L31/119 |
主分类号 |
H01L29/94 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
