Actively cooled dispenser system for improved resistivity and phase control in metal CVD from organometallic precursors

摘要

An apparatus and method for forming high-purity, high-conductivity metal films deposited by chemical vapor deposition (CVD) on a surface of a substrate is provided. The apparatus includes a cooling system which is in thermal contact with a precursor dispenser such that cooling is sufficiently controlled to prevent unwanted chemical impurities, i.e., non-metallic precursor byproducts, from being introduced into the deposited metal film. The apparatus and method can be used with a wide variety of metallic precursors and under most CVD reaction conditions.