| 摘要 |
The invention relates to an integrated circuit device comprising a circuit provided in an active circuit area (4) at a surface of a semiconductor body (1). The circuit comprises circuit devices (2, 3) and an interconnect structure (8) comprising at least one patterned metal layer (5, 6) for interconnecting circuit devices (2, 3) so as to form the circuit. The patterned metal layer (5, 6) is disposed over the circuit devices (2, 3). The circuit further comprises a layer of passivating material (9) disposed atop the interconnect structure (8) and a bump electrode (11, 12, 13) for connection of the circuit to the outside world. The bump electrode (11, 12, 13) lies substantially perpendicularly above the active circuit area (4). According to the invention, the circuit devices (2, 3) are substantially directly electrically connected to the bump electrode (11, 12, 13) by means of an electrical connection (10) extending from the interconnect structure (8) and passing through the layer of passivating material (9). |
