| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to prevent the generation of a moat by using polysilicon or amorphous silicon as a mask. CONSTITUTION: A pad oxide(22) and a polysilicon layer(23) are sequentially formed on a semiconductor substrate(21). A trench is formed by etching the substrate(21) using the polysilicon layer(23) and the pad oxide(22) as a mask. An oxide spacer(25) is formed at both sidewalls of the trench, and a buried oxide(26) is filled into the trench. The polysilicon layer(23) is exposed by polishing the buried oxide(26), and the exposed polysilicon layer(23) is removed, thereby forming an isolation layer(27).
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