| 摘要 |
PURPOSE: A capacitor formation method of semiconductor devices is provided to reduce contact resistance of a storage electrode by implanting impurities into a barrier metal film. CONSTITUTION: An interlayer dielectric(21) is formed on a semiconductor substrate(11) so as to expose a storage electrode contact region. After depositing a barrier metal film(17) made of a titanium nitride on the storage electrode contact region, impurity ions are implanted into the barrier metal film(17). A contact plug(19) is formed by filling a polysilicon layer into the contact region and planarizing. Then, a storage electrode is formed to connect the contact plug(19).
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