| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to improve a stability of an SEG(Selective Epitaxial Growth) layer by increasing an exposed area of a gate electrode. CONSTITUTION: An isolation layer(13) for defining an active region is formed in a semiconductor substrate(11). A gate insulator(15) and a gate electrode(17) are sequentially formed on the resultant structure. A first nitride spacer is formed at both sidewalls of the gate electrode, and a first oxide pattern is formed at bottom of the first nitride spacer. A second nitride spacer(22) is formed to expose the first oxide pattern by selectively removing the first nitride spacer. A second oxide pattern(20) is formed to expose edge portions of the second nitride spacer(22) and sidewalls of the gate electrode by cleaning the resultant structure using NH4OH and HF solutions. Then, an SEG layer(23) is grown, thereby increasing surface area of the gate electrode(17).
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