| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to prevent an oxidation of tungsten patterns by forming a spacer of stacked structure at both sidewalls of a bit line. CONSTITUTION: An interlayer dielectric(22) having a bit line contact plug(23) is formed on a semiconductor substrate(21). After forming an etch stopper(24), a bit line contact hole is formed by selectively etching the etch stopper. A bit line contact pad(25) is formed to connect the bit line contact plug via the bit line contact hole. A bit line(26) made of W film and a mask insulator(27) are sequentially formed on the bit line contact pad. An insulating spacer of triple structure is formed at both sidewalls of bit lines by sequentially forming and patterning a first nitride(28), an oxide(29) and a second nitride(30).
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