| 摘要 |
PURPOSE: A transistor formation method on an SOI(Silicon-On-Insulator) substrate is provided to improve a threshold voltage, a short channel effect and an ESD(Electrostatic Discharge) by using an air-tunnel. CONSTITUTION: An isolation layer(19) is formed on an SOI substrate. A stacked structure of a gate insulator(21), a gate electrode(23) and a mask insulator(25) is formed on the SOI substrate. After forming an LDD(Lightly Doped Drain) region(27), an insulating spacer(29) is formed at both sidewalls of the stacked structure. A groove is formed by selectively etching the SOI substrate using the mask insulator(25) and the insulating spacer(29) as a mask. An air-tunnel(33) is formed by removing the oxide exposed on the groove.
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