| 摘要 |
A method for producing an electrode enabling fabrication of small electrodes at a high dimensional accuracy without being affected by the number of connections between chips, comprising the steps of forming an insulating film on an interconnection pattern of a semiconductor chip, forming a mask layer having an opening on the insulating film at a position where an electrode is to be formed, removing the insulating film within the opening by using the mask layer as a mask to expose a portion of the interconnection pattern, forming a conductor layer on the exposed interconnection pattern and the mask layer, removing the conductor layer formed on the mask layer while leaving the conductor layer formed on the exposed interconnection pattern, and removing the mask layer, and a method for producing a semiconductor device provided with such electrode.
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