发明名称 Fuse for a semiconductor configuration and method for its production
摘要 A semiconductor configuration is described which includes a semiconductor body having a main surface and an insulator layer disposed on the main surface of the semiconductor body. The insulator layer has a cavity formed therein extending to the main surface of the semiconductor body. A fuse having a fusible part extends from the main surface of the semiconductor body toward an upper surface of the insulator layer at right angles to the main surface of the semiconductor body, and the fuse is embedded in the cavity. A method for producing the semiconductor configuration having the fuse is also described.
申请公布号 US2002084508(A1) 申请公布日期 2002.07.04
申请号 US20010013298 申请日期 2001.12.10
申请人 LE THOAI-THAI;LINDOLF JURGEN 发明人 LE THOAI-THAI;LINDOLF JURGEN
分类号 H01L21/82;H01L23/525;(IPC1-7):H01L29/00 主分类号 H01L21/82
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