METHOD FOR FABRICATING LINE AND LINE CONNECTION PART OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a line and a line connection part of a semiconductor device is provided to enhance a diffusion prevention function of a barrier layer to copper by forming a trench as an insulating layer having a low dielectric constant value and nitrifying a surface of an exposed insulating layer. CONSTITUTION: A capping layer(23) is formed on a substrate(20) including a lower line(21) and an interlayer dielectric(22). An inter metal dielectric layer(24) is formed on the capping layer(23). A via hole(H) or a contact hole(H) and a trench(T) are formed by patterning partially the inter metal dielectric layer(24) and the capping layer(23). A nitride layer is formed by nitrifying a surface of the inter metal dielectric layer(24). A surface of the lower line(21) is cleaned. A barrier layer is formed on the nitride layer. An upper conductive layer is formed on the barrier layer. An upper line(270) is formed by planarizing the upper conductive layer.