| 摘要 |
PURPOSE: A capacitor formation method of semiconductor devices is provided to improve stability of processing by entirely removing nonvolatile polymers using multiple plasma treatments. CONSTITUTION: A lower electrode(13), a dielectric film(15), a conductive layer and a photoresist pattern(19) are sequentially formed on a semiconductor substrate(11). The conductive layer and the dielectric film(15) are selectively etched to form an upper electrode(17) by using the photoresist pattern, wherein nonvolatile polymers generates in the photoresist pattern. At this time, the polymers are entirely removed by triple plasma treatments. That is, H2O plasma treatment is firstly performed, C-F group plasma treatment is secondly carried out, and O2 plasma treatment are thirdly performed, thereby simultaneously removing the polymers and the photoresist pattern.
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