| 摘要 |
PURPOSE: A transistor formation method of semiconductor devices is provided to improve a short channel effect and to reduce a contact resistance by forming elevated source and drain regions. CONSTITUTION: A gate insulator(35), a gate electrode(37) and a mask insulator(39) are sequentially stacked on a semiconductor substrate(31). A first insulating spacer(41) is formed at both sidewalls of the stacked structure. An epitaxial Si layer(43) is grown on an LDD(Lightly Doped Drain) region. An epitaxial SiGe layer(45) is grown on the epitaxial Si layer(43). A second insulating spacer(47) is formed at both sidewalls of the first insulating spacer. Elevated source and drain regions(40) are formed by implanting heavily doped dopants into the substrate.
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