发明名称 |
Heat Processing apparatus |
摘要 |
An object of the present invention is to heat a substrate at a uniform temperature all over its surface. The heat processing apparatus of the present invention comprises: a hot plate for putting the substrate on or near its surface; a ceiling with a first and second concentric regions with a first and second heat pipes, respectively, opposite to the hot plate surface; a surrounding member for surrounding a space between the hot plate and the ceiling; gas flow generation means for generating a gas flow in the space from a circumference of the hot plate to a center of the ceiling; and a temperature control mechanism for controlling a regional temperature of the first region. The temperature control mechanism controls the regional temperature in such a manner that a heat emission is greater from a center of the substrate than from a circumference of the substrate.
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申请公布号 |
US2002086259(A1) |
申请公布日期 |
2002.07.04 |
申请号 |
US20010028789 |
申请日期 |
2001.12.28 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
SHIRAKAWA EIICHI;FUKUOKA TETSUO;NOGAMI TSUYOSHI |
分类号 |
H01L21/027;F27D19/00;F28D15/02;F28D15/06;H01L21/00;(IPC1-7):F28F7/00;F27B9/04;F28F27/00;C23C16/00 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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