发明名称 Heat Processing apparatus
摘要 An object of the present invention is to heat a substrate at a uniform temperature all over its surface. The heat processing apparatus of the present invention comprises: a hot plate for putting the substrate on or near its surface; a ceiling with a first and second concentric regions with a first and second heat pipes, respectively, opposite to the hot plate surface; a surrounding member for surrounding a space between the hot plate and the ceiling; gas flow generation means for generating a gas flow in the space from a circumference of the hot plate to a center of the ceiling; and a temperature control mechanism for controlling a regional temperature of the first region. The temperature control mechanism controls the regional temperature in such a manner that a heat emission is greater from a center of the substrate than from a circumference of the substrate.
申请公布号 US2002086259(A1) 申请公布日期 2002.07.04
申请号 US20010028789 申请日期 2001.12.28
申请人 TOKYO ELECTRON LIMITED 发明人 SHIRAKAWA EIICHI;FUKUOKA TETSUO;NOGAMI TSUYOSHI
分类号 H01L21/027;F27D19/00;F28D15/02;F28D15/06;H01L21/00;(IPC1-7):F28F7/00;F27B9/04;F28F27/00;C23C16/00 主分类号 H01L21/027
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