发明名称 Focused ion beam metal deposition
摘要 Introducing at least one metal such as cobalt, molybdenum, metal carbonyl, tungsten, platinum, or other suitable metal to a focused ion beam. Introducing the focused ion beam to a substrate within a processing chamber. Forming at least one layer over a substrate. Applying heat to the layer by, for example, a laser.
申请公布号 US2002086508(A1) 申请公布日期 2002.07.04
申请号 US20000753108 申请日期 2000.12.30
申请人 GAVISH ILAN;GREENZWEIG YUVAL 发明人 GAVISH ILAN;GREENZWEIG YUVAL
分类号 C23C16/04;C23C16/16;C23C16/48;C23C16/52;C23C16/56;H01L21/285;H01L21/768;(IPC1-7):H01L21/320;H01L21/476 主分类号 C23C16/04
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