| 摘要 |
A laser diode includes: a substrate having a first conductive type; a first cladding layer having a first conductive type and formed on the substrate; an active layer including a plurality of quantum dots and formed on the first cladding layer; a diffraction grating having a Bragg wavelength of lambdg and formed on the active layer; a second cladding layer having a second conductive type and formed on the active layer; a first electrode for injecting carriers having a first polarity into the active layer via the substrate; and a second electrode for injecting carriers having a second polarity into the active layer via the second cladding layer. The diffraction grating has a pitch satisfies the equation: DELTAE<=1.1&Ggr;, where &Ggr;is the full width at half maximum (FWHM) of the gain spectrum of the active layer and DELTAE is an amount of shift of an energy corresponding to the Bragg wavelength lambdg from the center wavelength energy of the gain spectrum.
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