发明名称 |
THIN FILM MAGNETIC SUBSTANCE STORAGE DEVICE |
摘要 |
PURPOSE: To accelerate data read from an MRAM(Magnetic RAM) device formed of a magnetic substance memory cell having a magnetic tunnel junction section. CONSTITUTION: A memory cell MC and a dummy memory cell DMC are respectively connected with bit lines BL and /BL at data read, through which a data read current flows. A read gate RG of a selected memory cell array drives the voltage of read data buses RDB and /RDB depending on the voltage of the bit lines BL and /BL. A data read circuit 55a amplifies the voltage difference between the read data buses RDB and /RDB to provide an output of read data DOUT. Since the read data buses RDB and /RDB can be disconnected from the path of the data read current by using the read gate RG, a voltage change in the bit lines BL and /BL is caused quickly to attain a high data read speed. |
申请公布号 |
KR20020052222(A) |
申请公布日期 |
2002.07.03 |
申请号 |
KR20010048143 |
申请日期 |
2001.08.10 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HIDAKA HIDETO |
分类号 |
G11C11/14;G11C11/15;G11C11/16;H01L21/8246;H01L27/10;H01L27/105;H01L43/08 |
主分类号 |
G11C11/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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