发明名称 |
METHOD AND APPARATUS FOR GROWING SILICON CARBIDE CRYSTALS |
摘要 |
A method and apparatus for controlled, extended and repeatable growth of high quality silicon carbide boules of a desired polytype is disclosed which utilizes graphite crucibles coated with a thin coating of a metal carbide and in particular carbides selected from the group consisting of tantalum carbide, hafnium carbide, niobium carbide, titanium carbide, zirconium carbide, tungsten carbide and vanadium carbide. |
申请公布号 |
EP1218572(A1) |
申请公布日期 |
2002.07.03 |
申请号 |
EP20000978907 |
申请日期 |
2000.10.05 |
申请人 |
CREE, INC. |
发明人 |
KORDINA, OLLE, CLAES, ERIK;PAISLEY, MICHAEL, JAMES |
分类号 |
C30B29/36;C30B23/00;C30B25/00 |
主分类号 |
C30B29/36 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|