发明名称 |
Nonvolatile semiconductor memory device |
摘要 |
In a nonvolatile semiconductor memory device, in which programming operation of data is conducted by injecting hot electron generated between a source layer and a drain layer of a memory cell into a floating gate between the both layers on an upper potion of surface of a semiconductor, while verification of the data programmed is conducted by making discrimination on whether voltage applied to the drain is kept or not, depending upon a height of a threshold voltage of the memory cell.
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申请公布号 |
US6414877(B2) |
申请公布日期 |
2002.07.02 |
申请号 |
US20010769358 |
申请日期 |
2001.01.26 |
申请人 |
HITACHI, LTD.;HITACHI DEVICE ENG |
发明人 |
SAEKI SHUNICHI;KURATA HIDEAKII;KOBAYASHI NAOKI |
分类号 |
G11C16/02;G11C11/56;G11C16/28;G11C16/34;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/00 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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