Semiconductor memory device capable of reliably performing burn-in test at wafer level

摘要

In a word line drive circuit for driving a word line to a boosted voltage level, a drive signal that is activated in response to a wafer burn-in signal is applied to the gate of a transistor for preventing the floating state of the word line. Even if a boost signal is transmitted to a corresponding word line through a word line driver circuit, the floating state prevention transistor can be turned off at high speed, an electric charge flow path can be cut off, and the word line can be driven reliably to the boosted voltage level. Therefore, reliable burn-in can be implemented.