Selective state change analysis of a SOI die

摘要

Analysis of a semiconductor die having silicon-on-insulator (SOI) structure is enhanced by capacitively coupling a signal to the die. According to an example embodiment of the present invention, a die having a thinned back side is analyzed by capacitively coupling an input signal through the insulator portion of the SOI structure and effecting a state change to circuitry in the die. The state change is used to evaluate a characteristic of the die, such as by detecting a response to the state change. The ability to force such a state change is helpful for evaluating dies having SOI structure, and is particularly useful for evaluation techniques that require or benefit from maintaining the insulator portion of the SOI structure intact.