发明名称 |
Method of manufacturing surface acoustic wave device |
摘要 |
A method of manufacturing a surface acoustic device having an electrode containing an Al and an other metal comprising; forming patterning a layer of an Al and other metal forming the electrode by reactive ion etching which is conducted by using an etching gas containing a mixed gas comprising Cl2 and He at a gas pressure of 0.1 Pa to 3 Pa.
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申请公布号 |
US6413439(B1) |
申请公布日期 |
2002.07.02 |
申请号 |
US19990437832 |
申请日期 |
1999.11.10 |
申请人 |
FUJITSU LIMITED;FUJITSU MEDIA DEVICES LIMITED |
发明人 |
NISHIHARA TOKIHIRO;IKATA OSAMU;SATOH YOSHIO |
分类号 |
H01L21/302;H01L21/3065;H03H3/08;H03H9/25;(IPC1-7):H01L41/08 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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