发明名称 |
Process of removing CMP scratches by BPSG reflow and integrated circuit chip formed thereby |
摘要 |
A method for removing scratches from a dielectric layer comprising the steps of: providing a layer of a reflowable dielectric material; and heating the dielectric layer to a temperature sufficient to cause the reflowable dielectric material to reflow is provided. This method provides a manner to remove the scratches created during the chemical mechanical polish steps, which can later become filled with metallization, causing shorts in the circuitry and subsequent integrated circuit chip failure.
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申请公布号 |
US6413870(B1) |
申请公布日期 |
2002.07.02 |
申请号 |
US19960724574 |
申请日期 |
1996.09.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GAMBINO JEFFREY P.;LANDERS WILLIAM F. |
分类号 |
H01L21/3105;H01L21/316;H01L21/768;(IPC1-7):H01L21/301 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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