发明名称 Process of removing CMP scratches by BPSG reflow and integrated circuit chip formed thereby
摘要 A method for removing scratches from a dielectric layer comprising the steps of: providing a layer of a reflowable dielectric material; and heating the dielectric layer to a temperature sufficient to cause the reflowable dielectric material to reflow is provided. This method provides a manner to remove the scratches created during the chemical mechanical polish steps, which can later become filled with metallization, causing shorts in the circuitry and subsequent integrated circuit chip failure.
申请公布号 US6413870(B1) 申请公布日期 2002.07.02
申请号 US19960724574 申请日期 1996.09.30
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 GAMBINO JEFFREY P.;LANDERS WILLIAM F.
分类号 H01L21/3105;H01L21/316;H01L21/768;(IPC1-7):H01L21/301 主分类号 H01L21/3105
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