| 摘要 |
Interconnections carrying the greatest currents within a semiconductor circuit are formed by an interconnect having at least one and commonly two or more ribs extending generally orthogonally from the interconnect line. The interconnect line is generally horizontal with the rib or ribs extending generally vertically downward from the interconnect line. The resulting interconnect occupies a surface area corresponding to that of the interconnect line yet includes the conductive material of both the interconnect line and the rib or ribs so that the interconnect has substantially less resistance than the interconnect line alone or the rib or ribs alone. The rib or ribs and interconnect line are produced from a conductive layer formed over an insulation layer after the insulation layer has been appropriately masked and etched. The rib or ribs can be formed over conductive plugs which are aligned with contact locations on a semiconductor structure and preformed through an insulation layer formed over the semiconductor structure. The rib or ribs and conductive plugs can also be formed together by forming a mask between two insulating layers to locate the conductive plugs. The top insulation layer is masked and etched to form trenches with openings through the bottom insulation layer being etched through the mask which prevents the bottom insulation layer from being etched other than to form openings for the conductive plugs. A layer of conductive material fills the conducive plug openings, corresponding openings in the mask and the trenches.
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