发明名称 |
Semiconductor device and method of fabricating the same |
摘要 |
A semiconductor device may include a gate pattern formed on a semiconductor substrate. At least one impurity region may be formed in the semiconductor substrate such that at least a portion of the at least one impurity region is disposed under the gate pattern. An epitaxial growth layer may be formed on the at least one impurity region. The epitaxial growth layer may include a first epitaxial growth portion spaced apart from the gate pattern and a second epitaxial growth portion extending toward the gate pattern from the first epitaxial growth portion.
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申请公布号 |
US2008048217(A1) |
申请公布日期 |
2008.02.28 |
申请号 |
US20070790364 |
申请日期 |
2007.04.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM KI-CHUL;RHEE HWA-SUNG |
分类号 |
H01L29/76;H01L21/336 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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