| 摘要 |
A DC magnetron sputter reactor for sputtering copper, its method of use, particularly the ignition sequence, and shields and other parts promoting self-ionized plasma (SIP) sputtering, preferably at pressures below 5 milliTorr, preferably below 1 milliTorr. The SIP copper layer can act as a seed and nucleation layer for hole filling with conventional sputtering (PVD) or with electrochemical plating (ECP). Preferably, the plasma is ignited in a cool process in which low power is applied to the target in the presence of a higher pressure of argon working gas. After ignition, the pressure is reduced, and target power is ramped up to a relatively high operational level to sputter deposit the film.
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