发明名称 |
Bias generating circuit for use with an oscillating circuit in an integrated circuit charge pump |
摘要 |
In an improved charge pump bias generating circuit for a charge pump for a semiconductor integrated circuit device, the pump has a bias generator which has an input for receiving a pump enable signal. The bias generator generates a ramped bias signal in response to the pump enable signal. A voltage controlled oscillator has an input to receive the ramped bias signal and generates an oscillating signal having a frequency which is dependent upon the voltage of the ramped bias signal. As a result, the sudden turn on of the pump enable signal would cause a gradual turn on of the voltage controlled oscillator gradually turning on the clock output signal from the voltage oscillator, thereby reducing power surge in the circuit.
|
申请公布号 |
US6414522(B1) |
申请公布日期 |
2002.07.02 |
申请号 |
US20000661681 |
申请日期 |
2000.09.14 |
申请人 |
SILICON STORAGE TECHNOLOGY, INC. |
发明人 |
NGUYEN HUNG Q.;NGUYEN SANG |
分类号 |
G05F3/20;G11C5/14;H02M3/07;H03K3/03;H03K3/354;(IPC1-7):H03C3/00 |
主分类号 |
G05F3/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|