发明名称 Bias generating circuit for use with an oscillating circuit in an integrated circuit charge pump
摘要 In an improved charge pump bias generating circuit for a charge pump for a semiconductor integrated circuit device, the pump has a bias generator which has an input for receiving a pump enable signal. The bias generator generates a ramped bias signal in response to the pump enable signal. A voltage controlled oscillator has an input to receive the ramped bias signal and generates an oscillating signal having a frequency which is dependent upon the voltage of the ramped bias signal. As a result, the sudden turn on of the pump enable signal would cause a gradual turn on of the voltage controlled oscillator gradually turning on the clock output signal from the voltage oscillator, thereby reducing power surge in the circuit.
申请公布号 US6414522(B1) 申请公布日期 2002.07.02
申请号 US20000661681 申请日期 2000.09.14
申请人 SILICON STORAGE TECHNOLOGY, INC. 发明人 NGUYEN HUNG Q.;NGUYEN SANG
分类号 G05F3/20;G11C5/14;H02M3/07;H03K3/03;H03K3/354;(IPC1-7):H03C3/00 主分类号 G05F3/20
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